RFswitch - High frequency switch with improved insulation and insertion loss
Keywords: Radio frequency switch, isolation, frequency extension, CMOS, system-on-chip
In order to improve the insulation properties of the E-RFS, signals applied to the input of the RFS are attenuated and inverted by the electronic network and then added again at the output of the RFS so that the output signal of the E-RFS is significantly smaller overall than the signal transmitted by the RFS.
- Improved insulation
- Cost-effective process
- Bandwidth expansion
- Frequency expansion
- Easy to use
- Versatile fields of application
- Performance improvement
Electrical switches are important components in everyday life and are found in almost all electrical devices such as mobile phones and radar equipment. Insulation (ISO) and insertion loss (IL) are decisive for the selection of a switch. The invention can be used in many ways depending on the goals set. For example, a switch with the invention can be implemented in a cost-effective process (e.g. CMOS) to achieve the same insulation as that of a GaAs process, implying the reduction of production costs. Furthermore, it can easily be integrated with other circuits to achieve a system-on-chip solution rather than using a separate switch on the front-end chip. It can also be used in radars (e.g. in automotive applications) to improve performance.
A patent application for the invention has been filed. We would be happy to inform you about the status of the proceedings. The procedure was verified experimentally. On behalf of the RWTH Aachen we offer interested companies the opportunity to acquire licenses for the invention and further development of the technology.
An invention of RWTH Aachen.