Power electronics use rapid-switching electronic components in such assemblies as inverters, frequency converters, and switching regulators to convert electrical energy. These electronic components must cost as little as possible, and some applications require very high power density or low weight. In addition to standard silicon (Si) semiconductors, there are silicon carbide (SiC) and gallium nitride (GaN) conductors that feature a wide band gap and allow very high switching frequencies.  A new invention from the Bonn-Rhine-Sieg University of Applied Sciences is now using a new electronic circuit to control these GaN GIT semiconductor components. It involves at least one capacitor and a Zener diode connected in parallel. The advantage is that this driver circuit can control power semiconductors at high frequencies (in the megahertz range). The circuit wave shape improves control, reducing the number of components, including parasitic ones. It also allows negative gate control, even if unipolar supply is used in the gate driver circuit. Other advantages include reduced losses, increased power density, and a simpler circuit design.